Optimized for Low Earth Orbit constellations, Infineon’s new memory and power products support reliable, compact, and cost-effective satellite operations.
Infineon Technologies has introduced a new range of radiation-tolerant memory devices designed specifically for Low Earth Orbit (LEO) satellite applications, marking its entry into the fast-evolving NewSpace segment. As thousands of LEO satellites continue to be deployed for applications like global connectivity, remote sensing, and direct-to-device communication, there is a growing demand for compact, cost-efficient, and reliable onboard electronics.
Unlike traditional satellites in geostationary orbit (GEO), LEO satellites operate in a lower radiation environment and typically have shorter mission lifespans. This allows for the use of more commercially viable electronic components without compromising on reliability. Infineon’s new memory portfolio addresses these needs with components tailored for small satellites—ranging from nanosats to 250 kg class satellites—enabling scalable and economical deployment of LEO constellations.
The new memory family includes:
- Low-power, radiation-tolerant F-RAMs
- High-density QSPI NOR Flash (256 Mbit and 512 Mbit)
- 256 Mbit and 512 Mbit pseudo-static RAM (pSRAM)
These devices are optimized for space missions with constraints on size, weight, power, and cost (SWaP-c). The F-RAMs are rated for -55°C to +125°C and offer a radiation tolerance of 50 krad(Si). NOR Flash and pSRAMs support -40°C to +125°C, with radiation ratings of 30 krad(Si) and 100 krad(Si), respectively. Each device undergoes full electrical testing and offers single lot date code traceability.
A highlight of the portfolio is the pSRAM, a unique hybrid that behaves like static RAM externally while functioning like DRAM internally, offering a power-efficient, high-throughput solution ideal for data buffering in space systems.
Complementing this memory lineup is a suite of radiation-tolerant power devices from Infineon’s IR HiRel group. These include 60 V and 150 V N- and P-channel power MOSFETs, rated to 30 krad(Si) and qualified to AEC-Q101 standards—designed to withstand the demands of 2-to-5-year LEO missions.
