The UFS 4.1 storage uses a 321-layer chip for faster speed, less power, and thin size—made for AI features in slim phones.
SK hynix has introduced a UFS 4.1 mobile storage solution built on its 321-layer 1Tb triple-level cell 4D NAND flash—the highest layer count achieved so far. The product is designed to meet growing demand for high-performance, low-power storage in smartphones handling on-device AI.
The new storage offers a sequential read speed of 4300MB/s, the fastest among UFS 4.1 products. It also improves random read speed by 15% and write speed by 40%, which helps with multitasking and faster app response—important for AI workloads on mobile devices.
Power efficiency is improved by 7% compared to the previous generation using 238-layer NAND. Thickness is reduced to 0.85mm, down from 1mm, making it suitable for ultra-slim devices.
Some of the key features of the NAND flash include:
- World’s first 321-layer 1Tb triple-level cell (TLC) 4D NAND flash
- Optimized for on-device AI, balancing speed and power efficiency
- 7% improvement in power efficiency over the previous 238-layer NAND generation
- Ultra-thin form factor with reduced thickness (0.85mm → suitable for slim smartphones)
- Fastest sequential read speed in UFS 4.1 category at 4300MB/s
- Enhanced multitasking performance with 15% faster random read and 40% faster random write
- Offered in 512GB and 1TB capacities
- Supports AI-driven workloads with faster data access and responsiveness
Ahn Hyun, President and Chief Development Officer, said that SK hynix plans to complete development of the 321-high 4D NAND-based SSD for both consumers and data centers within the year. “We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with an AI technological edge.”
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