IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are both widely used in power electronics for switching applications, but they have some differences in their characteristics and performance. Let’s understand the difference between IGBT and MOSFET
There are three major types of transistors available:
- bipolar transistors
- Metal Oxide Semiconductor Field Effect Transistor (MOSFETs)
- Insulated-Gate Bipolar Transistor (IGBTs)
The table above compares the performance and characteristics of these transistors.
Bipolar transistors are now hardly ever used for power electronics and switching applications because of the need for drive and protection circuits and slow switching speed.
Instead, MOSFETs and IGBTs are selectively used according to the required characteristics.
To know everything about MOSFET, check this article: Mosfet basics
In the low-current region, the MOSFET exhibits a lower on-state voltage than the IGBT. However, in the high-current region, the IGBT exhibits lower on-state voltage than the MOSFET, particularly at high temperatures. IGBTs are commonly used at a switching frequency lower than 20kHz because they exhibit higher switching loss than unipolar MOSFETs.
Also Read: High-Performance IGBT for EV Applications
Is It Possible to Use an IGBT In Place Of a Power MOSFET?