Renesas Electronics Corporation has introduced AE5 generation of Si IGBTs for EV inverters. The AE5 process for IGBTs has a smaller footprint and higher efficiency making it suitable for space-constrained power-intensive applications. The AE5 IGBTs offer one of the highest levels of performance and a high level of safety by minimizing parameter variations among the IGBTs and providing stability when operating multiple IGBTs in a parallel configuration. The IGBTs come in 4 models capable of withstanding 220A and 300A at 750 V and 150A and 200A at 1200 V. The AE5 offers a 50% reduction in the temperature dependence of gate resistance (Rg). This minimizes switching losses at high temperatures, spike voltage at low temperatures and short circuit withstand time, supporting high-performance designs.
According to the company, the silicon-based AE5 for IGBTs offers a 10% reduction in power loss and size compared to the previous generation of IGBTs. Moreover, the new IGBTs have a 10% higher current density compared to conventional products which can enhance power saving and thus ensure a higher driving range for the EVs. The new IGBTs are said to have lower parameter variations between the IGBTs thus offering significantly higher performance and safety as modules when operating in parallel configurations. These features provide engineers greater flexibility to design smaller inverters that achieve high performance.
“Demand for automotive power semiconductors is rapidly growing, as EVs become more widely available,” said Katsuya Konishi, Vice President of Renesas’ Power System Business Division. “Renesas’ IGBTs provide highly reliable, robust power solutions that build on our experience in manufacturing automotive-grade power products for the last seven years. With the latest devices soon to be in mass production, we are providing optimal features and cost performance for mid-range EV inverters that are expected to grow rapidly in the future.”
Key Features of AE5 IGBT:
- Steady performance throughout the operating junction temperature (Tj) range from -40°C to 175°C
- Industry’s highest performance level with an on-voltage Vce (saturation voltage) of 1.3V, a key value for minimizing power loss
- 10% higher current density compared to conventional products and small chip size (100mm2/300A) optimized for low power losses and high input resistance
- Stable parallel operation by reducing parameter variations to VGE(off) to ±0.5V
- Maintains reverse bias safe operating area (RBSOA) with a maximum Ic current pulse of 600A at 175°C junction temperatures, and a highly robust short circuit withstand time of 4µs at 400V.
- 50% reduction in the temperature dependence of gate resistance (Rg). This minimizes switching losses at high temperatures, spike voltage at low temperatures and short circuit withstand time, supporting high-performance designs.
- Available as a bare die (wafer)
- Enables a reduction in inverter power losses, improving power efficiency by up to 6% compared to the current AE4 process at the same current density, allowing EVs to drive longer distances and use fewer batteries.