Can GaN help meet AI’s growing power demands? 650V devices with low on-resistance are entering production for high-efficiency power conversion.
Navitas Semiconductor has begun shipping its fifth-generation GaNFast gallium nitride (GaN) power semiconductor technology, featuring 650 V GaN FETs designed for AI infrastructure, high-performance computing, industrial electrification, and other high-power applications.
The devices target power conversion systems where higher efficiency, switching speed, and power density are increasingly important. GaN allows power switches to operate at higher frequencies than conventional silicon devices, potentially reducing power losses and enabling smaller passive components and more compact power systems.
The initial device family includes 650 V GaN FETs with on-resistance (RDS(ON)) values ranging from 11 mΩ to 150 mΩ. The range is intended to cover different power-conversion requirements, from applications requiring low conduction losses to designs with different current and thermal constraints.
The GaNFast technology integrates the power transistor with functions such as gate drive, control, sensing, and protection in power IC implementations. This integration can reduce the number of external components while supporting faster power switching and system-level protection.
The Gen 5 devices are being manufactured on GlobalFoundries’ 200 mm GaN-on-silicon platform in Burlington, Vermont. The manufacturing process provides a wafer-scale production route for the devices while supporting US-based supply of GaN power semiconductors.
The first wafers are scheduled to ship in September, followed by internal samples in October and strategic customer samples before the end of the year.
“This milestone demonstrates the strength of American innovation and manufacturing,” says Chris Allexandre, President and CEO of Navitas. He adds that the Gen 5 technology is intended to support AI infrastructure and high-performance computing while enabling future generations of GaN devices.
For the official announcement, click here.
