New radiation-hardened transistors aim to deliver efficient, high-density power conversion for demanding space computing systems and next-generation processors and accelerators.
EPC has introduced three eGaN power transistors designed for power conversion in space-based computing systems. The EPC7050PCH, EPC7066PCH and EPC7065PCSH are intended to provide high-performance power conversion while withstanding the radiation conditions encountered in space.
The devices combine radiation tolerance with low resistance and high current capability. The EPC7050PCH is a 15V device rated for 101A continuous current, with typical RDS(on) of 0.28mΩ. The EPC7066PCH is rated at 25V and 101A, with typical RDS(on) of 0.37mΩ, while the EPC7065PCSH has a 40V rating, 101A continuous current capability and typical RDS(on) of 0.5mΩ.
All three devices are designed for synchronous rectifier applications on the secondary side of intermediate-bus converters, with outputs in the 5V–12V range. Their low resistance is intended to support high-frequency and high-efficiency operation.
The transistors also target point-of-load buck converters and intermediate voltage regulation applications supplying 0.8V core voltage to processors. Potential applications include power systems supporting space computing assets such as Versal SoCs and Nvidia GPUs.
According to the article, the devices provide radiation robustness and electrical performance for increasingly demanding space-computing platforms. Their design addresses the need to deliver reliable power to processors and accelerators as artificial intelligence and high-performance computing extend into space.
For engineering models, the article lists pricing of $85 for quantities of 500 units, while radiation-hardened, space-qualified versions are priced at $125. The devices are therefore positioned as power-conversion components for space systems where efficiency, power density and radiation tolerance are critical.
