HomeElectronics NewsHelps EVs go longer on one charge

Helps EVs go longer on one charge

SiC chips reduce power loss, handle heat, and improve efficiency in EVs, data centers, and industrial systems, helping manage rising power demand.

ROHM Develops 5th Generation SiC MOSFETs with Approx. 30% Lower On-Resistance at High Temperatures
ROHM Develops 5th Generation SiC MOSFETs with Approx. 30% Lower On-Resistance at High Temperatures

ROHM has introduced its 5th generation SiC MOSFETs under the EcoSiC™ series, targeting high-efficiency power systems in electric vehicles, AI servers, and industrial infrastructure. The devices focus on reducing energy loss in applications where power demand and heat are both increasing.

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The new generation cuts ON resistance by about 30% at high temperature (175°C) compared to its 4th generation, under the same voltage and chip size. This helps improve efficiency in systems like EV traction inverters, where thermal conditions are demanding. Lower loss also supports smaller system size and higher output in high-power setups.

Demand for such improvements is rising on two fronts. In data centers and AI servers, growing workloads are pushing power density higher, putting stress on existing power infrastructure. At the same time, electric vehicles need longer range and faster charging, which depends on more efficient inverters and onboard chargers. In both cases, reducing conversion losses is becoming critical, especially as systems scale from a few kilowatts to hundreds.

SiC devices are being used more widely to address this gap. ROHM was among the early companies to mass-produce SiC MOSFETs in 2010 and has since expanded its portfolio across discrete devices and modules. Its 4th generation products, introduced in 2020, saw adoption in both automotive and industrial systems, including designs meeting AEC-Q101 reliability standards.

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The 5th generation builds on this base with changes in device structure and manufacturing process. ROHM started supporting bare die versions in 2025 and completed development in March 2026. Samples of discrete and module products are planned from July 2026.

The company is now working to expand the lineup with more voltage ranges and package options, along with updates to design tools and application support. The focus is on making SiC easier to deploy as it moves into wider use across high-power systems.

Click here for the original announcement.

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a Senior Technology Journalist at Electronics For You, specialising in embedded systems, development boards, and IoT cloud solutions. With a Master’s degree in Signal Processing, she combines strong technical knowledge with hands-on industry experience to deliver clear, insightful, and application-focused content. Nidhi began her career in engineering roles, working as a Product Engineer at Makerdemy, where she gained practical exposure to IoT systems, development platforms, and real-world implementation challenges. She has also worked as an IoT intern and robotics developer, building a solid foundation in hardware-software integration and emerging technologies. Before transitioning fully into technology journalism, she spent several years in academia as an Assistant Professor and Lecturer, teaching electronics and related subjects. This background reflects in her writing, which is structured, easy to understand, and highly educational for both students and professionals. At Electronics For You, Nidhi covers a wide range of topics including embedded development, cloud-connected devices, and next-generation electronics platforms. Her work focuses on simplifying complex technologies while maintaining technical accuracy, helping engineers, developers, and learners stay updated in a rapidly evolving ecosystem.

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