Monday, June 17, 2024

High-Performance Memory Advancements For Data Centers

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The latest high-capacity memory technology is here, designed for data centres to handle demanding workloads efficiently.


Micron Technology, Inc. has launched a 32Gb monolithic die-based 128GB DDR5 RDIMM memory module. The memory module is strategically designed to provide robust support for data centre workloads and cater to a diverse range of applications within the data centre and cloud environments. These applications span from artificial intelligence (AI) to in-memory databases (IMDBs), and the efficient handling of multithreaded, multicore count general compute workloads. 

The key driver behind the exceptional performance of this memory module is Micron’s 1β (1-beta) technology, which sets it apart from its competitors. This technology leads to many improvements compared to other 3DS through-silicon (TSV) products. These enhancements encompass a more than 45% improvement in bit density, up to 24% improved energy efficiency, up to 16% lower latency, and a remarkable up to 28% boost in AI training performance.

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The 32Gb DDR5 memory solution incorporates innovative die architecture choices to maximise array efficiency and achieve the densest monolithic DRAM die possible. Including voltage domain and refresh management features optimises the power delivery network, resulting in significant improvements in energy efficiency. Furthermore, optimising the die-dimension aspect ratio enhances manufacturing efficiency for the 32Gb high-capacity DRAM die.

Micron’s 128GB RDIMMs are set to be available in platforms with speeds of 4800 MT/s, 5600 MT/s, and 6400 MT/s, and they will also be integrated into forthcoming platforms capable of achieving speeds of up to 8000 MT/s. 

“We are proud to set a new standard for high-capacity, high-speed memory in the data centre with Micron’s 128GB DDR5 RDIMMs, which delivers the memory bandwidth and capacity required for increasingly compute-intensive workloads,” said Praveen Vaidyanathan, vice president and general manager of Micron’s Compute Products Group. “Micron continues to enable improvements to the data centre ecosystem with early access to our advanced technologies and support in the design and integration of leading-edge high-capacity memory solutions.”

For more information, click here.

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a journalist at EFY. She is an Electronics and Communication Engineer with over five years of academic experience. Her expertise lies in working with development boards and IoT cloud. She enjoys writing as it enables her to share her knowledge and insights related to electronics, with like-minded techies.


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