Thursday, April 18, 2024

Market’s Lowest Dual-Side Cooling On-Resistance GaN FET

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This robust device is set to revolutionise power applications in industries such as data centres, eMobility, robotics, and more.

EPC has unveiled the EPC2361, a Gallium Nitride (GaN) Field-Effect Transistor (FET) that sets a new industry standard with its remarkably low on-resistance of just 1mΩ at 100V. Packaged in a compact 3 x 5mm QFN design, this innovative product features top and bottom cooling capabilities for enhanced thermal management. Designed to operate efficiently at 50A and 25°C with a 5V gate voltage, the EPC2361’s resistance increases to approximately 1.8mΩ at its maximum operating temperature of 150°C. While the preliminary datasheet does not specify the maximum Rds(on) figures, Electronics Weekly has contacted EPC for further details. 

The  package is engineered for optimal heat dissipation, with a junction-to-board thermal resistance of 1.5°C/W. It’s top heat spreader is metallic and connected to the source potential, requiring electrically isolating thermal interface material for half-bridge topologies. Capable of handling continuous currents of 101A at 25°C and pulse currents of up to 519A for 300µs, the EPC2361 is a robust solution for power applications. However, it does not provide avalanche protection for over-voltage spikes, a characteristic shared with other GaN hemt power transistors.Key features include:

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  • Designed for efficient operation at 50A and 25°C with a 5V gate voltage.
  • Resistance increases to approximately 1.8mΩ at a maximum operating temperature of 150°C.
  • Features a junction-to-package-top thermal resistance of 0.2°C/W.

For developers, EPC offers the EPC90156 development board, measuring approximately 50 x 50mm. This board facilitates the creation of a 100V 65A half-bridge using two EPC2361 transistors and a Up1966E gate driver from uPI Semiconductor. It is poised to revolutionize various applications, including ac-dc synchronous rectification, dc-dc conversion up to 80V, and motor drives ranging from 24 to 60V. Industries such as data centers, eMobility, robotics, drones, and solar power conversion are expected to benefit significantly from this advanced technology.

Akanksha Gaur
Akanksha Gaur
Akanksha Sondhi Gaur is a journalist at EFY. She has a German patent and brings a robust blend of 7 years of industrial & academic prowess to the table. Passionate about electronics, she has penned numerous research papers showcasing her expertise and keen insight.

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