Sunday, July 21, 2024

MOSFETs With Discrete Switching Solutions For Diverse Applications

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From Power over Ethernet (PoE) switches to motor controllers, these new solutions offer improved protection, reduced footprint, and enhanced electromagnetic compatibility, addressing the evolving needs of engineers and industries.

Nexperia has introduced MOSFETs, enhancing its portfolio of discrete switching solutions for various applications across various end markets. The release features 100 V application-specific MOSFETs (ASFETs) designed for Power over Ethernet (PoE), eFuse, and relay replacement. The new 100 V PoE ASFETs offer enhanced protection by limiting inrush currents and safely managing fault conditions, with an improved safe operating area (SOA) of up to three times greater while maintaining minimal RDS(on). These ASFETs are also suitable for battery management, Wi-Fi hotspots, 5G picocells, and CCTV and can replace mechanical relays in smart thermostats.

The key features include:

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  • 60% smaller than the previous LFPAK33 packaging.
  • Size reduction is particularly beneficial for Power over Ethernet (PoE) switches.
  • PoE switches can have up to 48 ports and require 96 MOSFETs on a single PCB.

The company has introduced 40 V NextPowerS3 MOSFETs with improved electromagnetic compatibility (EMC) performance. EMC issues often arise late in the product development cycle, leading to increased R&D costs and delayed market releases. The optimized NextPowerS3 MOSFETs offer similar EMC performance to that achieved with external snubber circuits but with higher efficiency and without additional components. These MOSFETs are ideal for switching converters and motor controllers in various applications and are available in LFPAK56 packaging.

Chris Boyce, MOSFET Marketing & Product Group Director at Nexperia, states, “By introducing these latest additions to our range of discrete FET solutions at APEC 2024, Nexperia showcases how we leverage our expertise in R&D to deliver optimized solutions. Our new 100 V PoE ASFETs and improved EMC performance in our 40 V NextPowerS3 MOSFETs demonstrate our commitment to supporting engineers in overcoming challenges across diverse applications. 

Akanksha Gaur
Akanksha Gaur
Akanksha Sondhi Gaur is a journalist at EFY. She has a German patent and brings a robust blend of 7 years of industrial & academic prowess to the table. Passionate about electronics, she has penned numerous research papers showcasing her expertise and keen insight.

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