Thursday, May 23, 2024

Carbon Nanotube MOSFETs With Controlled Polarity

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This approach has broader applications and could be adapted for other advanced field-effect transistor channel materials, including two-dimensional semiconductors.~ Researchers.

The team at the University of California, San Diego, in collaboration with the Taiwan Semiconductor Manufacturing Company, has recently created new carbon nanotube metal-oxide-semiconductor field-effect transistors (MOSFETs) using localised solid-state extension doping.

One-dimensional semiconductors like carbon nanotubes offer the potential to reduce the gate length of metal–oxide–semiconductor field-effect transistors (MOSFETs) beyond what is achievable with silicon-based transistors. However, creating industry-compatible doping methods and controlling the polarity of these devices is a complex challenge.

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These top-gate complementary carbon nanotube MOSFETs have been developed using localised conformal solid-state extension doping to determine device polarity and ensure balanced performance. In these transistors, the channel remains undoped.

Carbon technologies such as carbon nanotubes are becoming more and more relevant in this race to continue the Moore’s law

This allows for the achievement of complementary metal oxide semiconductor or CMOS-compatible threshold voltages for n- and p-MOSFETs at +0.29 V and -0.25 V, respectively. The fabrication process, which is compatible with standard industry practices, employs localised charge transfer.

This transfer occurs from defect levels in silicon nitride (SiNx) for n-type devices or from an electrostatic dipole at the SiNx/aluminium oxide (Al2O3) interface for p-type devices. The SiNx donor defect densities can reach up to 5 × 10¹⁹ cm⁻³, potentially supporting carbon nanotube carrier densities of 0.4 nm⁻¹ in the extensions of scaled nanotube devices.

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