HomeElectronics NewsSilicon Carbide Power Devices Improve Thermal Performance Significantly

Silicon Carbide Power Devices Improve Thermal Performance Significantly

Top-side cooled silicon carbide MOSFETs improve thermal management, switching efficiency and power density for electric vehicles, renewable energy systems and industrial power electronics.

Nexperia’s 1200 V SiC MOSFETs in QDPAK packaging
Nexperia’s 1200 V SiC MOSFETs in QDPAK packaging

Nexperia has expanded its wide-bandgap portfolio with 1200 V silicon carbide (SiC) MOSFETs in QDPAK packaging, introducing top-side cooled power devices designed for thermally demanding, high-power applications. The new devices target electric vehicle onboard chargers, DC-DC converters, EV charging infrastructure, photovoltaic inverters and uninterruptible power supplies, where efficient heat dissipation and compact designs are increasingly important.

The surface-mount QDPAK package transfers heat through its top surface instead of the printed circuit board, improving thermal performance and enabling higher power density. This approach also simplifies thermal management, allowing engineers to design smaller and more efficient power conversion systems without compromising reliability.

To enhance switching performance, the MOSFETs incorporate an additional Kelvin source pin that improves switching control while reducing ringing, electromagnetic interference (EMI) and switching transients. These features contribute to cleaner operation and greater efficiency in high-frequency power applications.

According to Nexperia, the devices are available in both industrial-grade and automotive-qualified versions, offering designers flexibility for a broad range of applications. The portfolio includes RDS(on) options of 17, 30, 40, 60 and 80 mΩ, enabling engineers to select devices that best balance efficiency, conduction losses and system requirements.

As power electronics continue to evolve towards higher efficiency and greater power density, silicon carbide technology is becoming increasingly important for next-generation energy conversion systems. By combining wide-bandgap SiC performance with top-side cooling and improved switching characteristics, the new MOSFETs provide engineers with a practical solution for designing compact, thermally efficient and scalable power systems for automotive, industrial and renewable energy applications.

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