This high-efficiency, compact reference design offers an ideal platform for next-generation microinverters and grid-tied residential power conversion systems.
To meet growing global demands for energy sustainability and security, renewable energy sources like solar power and energy storage systems are becoming increasingly critical. In residential settings, microinverters have gained popularity due to their favorable balance of cost and efficiency, along with their ease of installation. However, a key limitation of traditional microinverters lies in their unidirectional nature, which restricts their integration with energy storage systems. This challenge arises from the absence of bidirectional conversion capability in most existing microinverter architectures.
This reference design TIDA-010954 by Texas Instruments (TI) introduces a compact and efficient 600W single-stage bidirectional microinverter solution that addresses this limitation. Engineered for both solar photovoltaic (PV) and Battery Energy Storage System (BESS) applications, the inverter uses a cycloconverter-based AC-DAB (Dual Active Bridge) topology and Texas Instruments (TI) GaN power stages to achieve high power density and performance. The design supports bidirectional power flow, enabling it to function as both a solar microinverter and an energy storage inverter within the same system.
The compact board measures 290 mm × 100 mm × 32 mm and achieves a calculated power density of 640 W/L. With components mounted primarily on the top side and no heat sink required, the design is optimized for thermal and spatial efficiency. On the DC side, the inverter operates up to 60V and ±16A, while delivering 230VAC and 2.6A on the AC output. It also offers reactive power compensation, making it a versatile and robust solution for modern residential energy systems.
Digital control is managed through TI’s TMS320F28P55x microcontroller, which is hosted on the TMDSCNCD28P55X low-cost evaluation board. This controlCARD features a 180-pin HSEC180 high-speed edge connector, making it ideal for evaluation and prototyping in advanced power conversion applications.
Key power components include TI’s LMG2100R026, a 93V continuous, 100V pulsed, 53A GaN half-bridge power stage with integrated driver and FETs. Also integrated are the LMG365xR035 GaN FETs, which offer adjustable gate driver strength for EMI control and optimized switching. For current sensing, the design uses TMCS1123 and TMCS1133 Hall-effect sensors, both providing galvanic isolation, exceptional linearity, and low thermal drift—ensuring accurate and safe operation across a wide temperature range (–40°C to +85°C).
TI has tested this reference design. It comes with a bill of materials (BOM), schematics, assembly drawing, printed circuit board (PCB) layout, and more. The company’s website has additional data about the reference design. To read more about this reference design, click here.
