GaN-on-Silicon Carbide (SiC) Power Amplifier for High-Power Applications

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  • Macom Technology’s newest product release is ideal for use in avionics, high power mobile radios, wireless systems and test instrumentation
  • It significantly enhances the capability of using RF power and simplifies design-in effort

MACOM Technology (“MACOM”), a supplier of semiconductor solutions, has announced the introduction of its new Gallium Nitride on Silicon Carbide (GaN-on-SiC) power amplifier product line, the MACOM PURE CARBIDE™, which includes two new products, the MAPC-A1000 and the MAPC-A1100.

The two new general-purpose amplifier products are ideal for use in avionics, high power mobile radios, wireless systems and test instrumentation.  

  • The MAPC-A1000 is a high power GaN-on-SiC amplifier designed to operate between 30 MHz and 2.7 GHz and is housed in a surface mount plastic package. The easy-to-use general-purpose amplifier integrates an input match which simplifies the customer’s design-in effort. The amplifier can deliver more than 25 W (44dBm) at greater than 50 per cent efficiency from 500 MHz to 2.7 GHz when tested in a circuit designed for operation over 2.2 GHz simultaneous bandwidth.
  • The MAPC-A1100 is a high power GaN-on-SiC amplifier designed to operate up to 3.5 GHz. The device is capable of supporting both CW and pulsed operations with output power levels of at least 65 W (48.1dBm) in an air cavity ceramic package.   

“This new product line significantly enhances the capability of our existing RF Power product portfolio,” said Stephen G. Daly, President and Chief Executive Officer. “GaN on Silicon Carbide is a compelling technology and we are excited to begin offering our customers both standard and custom MACOM PURE CARBIDE™ power amplifier solutions.”


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