Power Efficient Rad-Hard Devices For Space Applications

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  • STMicroelectronics’ rugged rectifiers and high-voltage Schottky diodes are suitable for tolerating high-radiation space environment
  • These fail-proof devices are European Space Components Coordination (ESCC) qualified

STMicroelectronics has extended its portfolio of radiation-hardened power devices for space applications by introducing the new 200V and 400V power rectifiers and Single Event Burnout (SEB) -immune Schottky rectifiers at 45V and 150V.

The rectifier diodes are the STTH40200C 200V/2x20A dual diode in TO-254AA and the STTH60200C dual 200V/2x30A, and the STTH60400 single 400V/60A diode in hermetic SMD1.

The rad-hard Schottky diodes include 45V and 150V devices. These are SEB immune up to 61MeV/cm2/mg linear energy transfer (LET). The term SEB refers to the destruction of electronic devices due to heavy ionizing radiation such as cosmic rays encountered in space applications. The 150V and 45V devices are ready for direct connection to 100V and 28V satellite power buses. The forward voltage (VF) of the 150V devices is 0.78V (max) at 40A/125 degrees Celsius. The maximum VF for the 45V devices is 0.61V.

In total, ST has launched five European Space Components Coordination (ESCC)-qualified dual common-cathode Schottky parts including the STPS40A45C that contains a 45V/2x20A diode in a TO-254AA through-hole package. The STPS80A45C with a 45V/2x40A diode, STPS60A150C 150V/2x30A, and STPS80A150C 150V/2x40A are packaged as SMD.5 hermetic surface-mount devices. The STPS40A150C 150V/2x20A is offered in TO254AA.

These new rad-hard rectifiers and Schottky diodes have the ability to resist a total ionizing dose (TID) up to 3 Mrad (Si). The voltage drop is at four values of operating current to let multiple different power-supply designs use a single device type for ease and simplicity.

New device variants are in stock now.


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