Designed for higher voltage systems, the 200V BCD process enables compact, efficient power ICs for EV platforms and AI data centers.
As electric vehicles and AI data centres move toward higher voltage architectures, demand is rising for power semiconductors that can handle higher efficiency, reliability, and thermal stress. Automotive platforms are shifting from 12V to 48V systems, while AI servers and data centres are increasing operating voltages to improve power density and efficiency, creating the need for advanced high voltage semiconductor processes.
SK keyfoundry has announced the launch of its fourth generation 200V high voltage 0.18 micrometre BCD process, marking a major step in its power semiconductor roadmap. The process integrates bipolar, CMOS, and DMOS devices on a single chip, enabling compact and efficient power IC designs.
The process improves key performance parameters such as specific on resistance and breakdown voltage by over 20 percent compared to the previous generation. By offering optimized low on resistance devices based on operating voltage, the process reduces chip area and minimizes power loss, enhancing overall efficiency. A thick inter metal dielectric option enables safe signal transmission while blocking high voltage interference and noise, particularly in power management ICs and high voltage MOSFET designs.
Key features of the process include:
- Supports high voltage power management and conversion ICs
- Improved power efficiency and high temperature durability
- Thick IMD option for enhanced electrical isolation and noise suppression
- Embedded memory options including SRAM, ROM, MTP, and OTP
- Integrated Hall sensor support for precise motor control
- Compliant with AEC Q100 Grade 0 automotive reliability standards
Lee Dong-jae, CEO of SK keyfoundry says, “Mass production of the 200V high-voltage 0.18 μm BCD process is a meaningful achievement, and we plan to continue to advance our process technology in line with Power Semiconductor customer needs.”
