Infineon Technologies has introduced the EiceDRIVER 1EDL8011 high-side gate driver, designed to protect battery-driven applications during fault conditions.
In battery-powered devices developed by Infineon Technologies, like motor drives and switched-mode power supplies (SMPS), ensuring safety when a fault occurs is critical. To mitigate potential damage, high-side disconnect switches, such as MOSFETs, are often employed to isolate the load from the battery. Infineon’s latest driver targets applications including cordless power tools, robotics, e-bikes, and vacuum cleaners, enhancing their reliability in case of faults. The product is particularly relevant for engineers and developers working on battery-powered devices who require enhanced protection mechanisms in their designs.
The newly developed driver features rapid turn-on and turn-off capabilities for high-side N-channel MOSFETs, supported by its robust gate current capabilities. An integrated charge pump, combined with an external capacitor, ensures strong startup performance. This internal charge pump is particularly beneficial when the operating input voltage is low, as it maintains the necessary MOSFET gate voltage. The gate driver IC also manages inrush current and incorporates fault protection measures.
Safety is paramount, and the device includes Undervoltage Lockout (UVLO) protection to prevent operation under potentially hazardous conditions. With a compact DSO-8 package, it fits well in space-constrained designs. The driver further offers overcurrent protection (OCP), an adjustable current setting threshold, time delay features, and a safe startup mechanism that allows for flexible blanking during MOSFET turn-on transitions.
The driver operates within a wide voltage range of 8 V to 125 V, delivering a high gate sinking current of up to 1 A for efficient switching. Its low off-mode quiescent current of just 1 µA significantly reduces power consumption during sleep mode. Additionally, the V_DS sense feature is employed to trigger an overcurrent shutdown by monitoring the drain-to-source voltage of the disconnect MOSFET.
Infineon plans to showcase a demonstration of 1EDL8011 at the upcoming OktoberTech 2024 global technology forum in Silicon Valley on 17 October. For further details, visit Infineon’s website or click here.
