Friday, April 19, 2024

Industry-First 36GB HBM3E 12H DRAM

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The industry’s first 12-stack HBM3E DRAM with 1,280 GB/s bandwidth and 36 GB capacity is revolutionising AI applications and high-performance computing.

DRAM

Samsung Electronics, a leader in memory technology, announced the development of the HBM3E 12H, the industry’s first 12-stack HBM3E DRAM and the highest-capacity HBM product.

The DRAM provides a bandwidth of up to 1,280 gigabytes per second (GB/s) and a 36 gigabytes (GB) capacity, improving both aspects by more than 50% compared to the 8-stack HBM3 8H. The HBM3E 12H uses thermal compression non-conductive film (TC NCF), ensuring that the 12-layer products maintain the exact height specification as the 8-layer ones to comply with HBM package standards. This technology is expected to offer advantages for higher stacks as the industry aims to address chip die warping associated with thinner die. Samsung has reduced the thickness of its NCF material, achieving a chip gap of seven micrometres (µm) while eliminating voids between layers. These improvements result in a more than 20% increase in vertical density compared to the HBM3 8H product.

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Samsung’s TC NCF also enhances the thermal properties of the HBM by allowing bumps of varying sizes between the chips. Smaller bumps are used for signalling during the chip bonding process, while larger ones are placed in areas requiring heat dissipation. This approach also contributes to higher product yield.

As AI applications continue to proliferate, the product is poised to be a solution for future systems demanding more memory. Its performance and capacity will enable customers to manage their resources more flexibly and reduce the total cost of ownership (TCO) for data centres. In AI applications, using the HBM3E 12H, compared to the HBM3 8H, can increase the average speed of AI training by 34% and expand the number of simultaneous users of inference services by more than 11.5 times.

“The industry’s AI service providers are increasingly requiring HBM with higher capacity, and our new HBM3E 12H product has been designed to answer that need,” said Yongcheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. 

For more information, click here.

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a journalist at EFY. She is an Electronics and Communication Engineer with over five years of academic experience. Her expertise lies in working with development boards and IoT cloud. She enjoys writing as it enables her to share her knowledge and insights related to electronics, with like-minded techies.

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