The half-bridge IGBT modules offer low loss technologies for transportation, energy, and industrial applications. Features enhanced compatibility and thermal efficiency.
Vishay Intertechnology, Inc. has introduced five new half-bridge IGBT power modules in the redesigned INT-A-PAK package. Built on Vishay’s Trench IGBT technology, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N offer designers a choice of two technologies — low VCE(ON) or low Eoff — to reduce conduction or switching losses in high current inverter stages for transportation, energy, and industrial applications.
The half-bridge devices combine Trench IGBTs with Gen IV FRED Pt anti-parallel diodes with soft reverse recovery characteristics. Offering a new gate pin orientation, the modules’ INT-A-PAK package is now compatible with the 34 mm industry-standard package to offer a mechanical drop-in replacement.
The devices will be used in power supply inverters for railway equipment; energy generation, distribution, and storage systems; welding equipment; motor drives; and robotics. To reduce conduction losses in output stages for TIG welding machines, the devices offer a collector to emitter voltage of ≤ 1.07 V at +125 °C and rated current. For high frequency power applications, the two other variants offer low switching losses, with Eoff down to 1.0 mJ at +125 °C and rated current.
Some of the key features of VS-GT100TS065S include:
- VCES 650 V
- IC DC, T C = 80 °C: 185A
- V CE(on) at 100 A, 25 °C: 1.05 V
- Chip level V CE(on) at 100 A, 25 °C: 0.98 V
- Speed: DC to 1 kHz
- Package: INT-A-PAK
- Circuit configuration: Half bridge
The modules feature 650 V collector to emitter voltages, continuous collector current from 100 A to 200 A, and low junction to cause thermal resistance. UL-approved file E78996, the devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.
