Friday, December 5, 2025

Next-Gen SuperQ MOSFETs Enter 200 V Class

The series promises record efficiency and switching performance for applications ranging from motor drives and AI servers to solar inverters and USB-PD adapters.

SuperQ MOSFETs Enter 200 V Class

A new family of 200 V MOSFETs built on SuperQ architecture has entered mass production, with additional devices now sampling to customers. The series is designed to raise the cost-to-performance benchmark in power switching applications, combining low resistance with reliable high-temperature operation.

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The key features are:

  • 25 mΩ MOSFET now in production (TO-220 package)
  • Samples available in TOLL and D²PAK-7L packages
  • Lowest RDS(on): 5.5 mΩ
  • 1.2× lower resistance than current leader
  • 1.7× lower than next-best competitor

SuperQ by iDEAL Semiconductor marks the first major advance in silicon MOSFET design in more than two decades. The technology addresses long-standing trade-offs between conduction and switching losses, enabling faster operation and lower resistance while retaining the familiar advantages of silicon—ruggedness, mature manufacturing processes, and stability at 175 °C.

The reduction in conduction loss makes the devices well-suited for motor drives, LED lighting, battery protection, AI servers, isolated DC/DC modules, USB-PD adapters, and solar inverters. In these markets, efficiency gains can translate directly into system cost savings, higher reliability, and greater power density.

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Industry analysts highlight the significance of this move, as it underscores that silicon-based innovation is still advancing despite the momentum behind wide-bandgap materials such as SiC and GaN. By relying on established CMOS-compatible processes, the SuperQ platform offers a pathway to higher efficiency without the supply chain risks or cost hurdles often associated with newer semiconductor materials.

With one device now in mass production and four more in sampling, the 200 V SuperQ lineup is poised to accelerate adoption in high-growth power sectors, offering designers an option that blends next-level efficiency with the proven benefits of silicon manufacturing.

Akanksha Gaur
Akanksha Gaur
Akanksha Sondhi Gaur is a journalist at EFY. She has a German patent and brings a robust blend of 7 years of industrial & academic prowess to the table. Passionate about electronics, she has penned numerous research papers showcasing her expertise and keen insight.

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