Save energy and make power systems work without changing boards. See how 1200 V SiC MOSFET modules handle high-speed power.
Power efficiency and reliability remain major challenges in medium to high frequency power systems, particularly in automotive, energy, industrial, and telecom applications. Engineers often struggle with high switching losses, thermal limitations, and limited power density in systems such as solar inverters, EV chargers, SMPS, DC/DC converters, UPS, HVAC units, large battery storage, and telecom power supplies. Adopting newer, more efficient devices can also be costly and time-consuming, as it may require redesigning PCBs, adding insulation, or reworking thermal management solutions.
To help engineers overcome these issues, Vishay has introduced five new 1200 V silicon carbide (SiC) MOSFET power modules — VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120. These modules are designed to improve power conversion efficiency, reduce losses, and simplify system integration while maintaining high reliability under demanding operating conditions.
Each module integrates a SiC MOSFET with a soft body diode that reduces reverse recovery, lowering switching losses and improving overall efficiency. The modules are offered in single switch and low-side chopper configurations, providing flexibility for different power stage designs and enabling high-frequency operation without compromising performance. This combination addresses both energy efficiency and thermal challenges in modern power systems.
The modules use the industry-standard SOT-227 package, which allows direct replacement of existing solutions without requiring PCB redesign. The molded package also provides electrical insulation up to 2500 V for one minute, eliminating the need for additional insulation between the device and the heatsink, reducing system cost and simplifying assembly.
These devices support continuous drain currents ranging from 50 A to 200 A, with on-resistance as low as 12.1 mΩ. They are RoHS compliant, offer high-speed switching with low capacitance, and can operate at junction temperatures up to +175 °C. By combining high efficiency, thermal resilience, and ease of integration, these new power modules enable designers to meet demanding system requirements while reducing development time and cost.
