By stacking diamond with a 2D material, researchers create compact, high-voltage electronics capable of thriving in extreme heat, radiation, and industrial environments.
As demand grows for electronic systems that can operate under high power, extreme heat, and radiation heavy conditions, conventional silicon based devices are approaching their physical limits. Materials that can handle higher voltages and temperatures while maintaining efficiency are increasingly important for applications such as power grids, industrial equipment, space systems, and nuclear environments.
Diamond has long been viewed as a promising alternative due to its exceptional thermal conductivity, resistance to radiation, and ability to handle high electrical loads. However, its adoption in electronic circuits has been limited by challenges in enabling efficient electrical conduction, particularly the difficulty of achieving reliable n type behaviour at room temperature.
Researchers at the US Department of Energy’s Argonne National Laboratory have now demonstrated a new approach that addresses this limitation by combining diamond with an ultrathin two dimensional material. By stacking a layer of molybdenum disulphide on diamond, the team enabled electrical current to flow efficiently at room temperature without relying on traditional chemical doping methods.
Instead of introducing foreign atoms into the diamond structure, which can create defects and limit performance, the researchers used heterointegration. In this approach, the two materials interact at their interface, allowing electrical charges to move through a tunneling process when voltage is applied. This creates behavior similar to a conventional semiconductor junction while preserving the inherent strength of diamond.
The stacked structure allows diamond to act as a functional electronic material while avoiding long standing material limitations. The researchers believe this method could support the development of compact, high performance electronic devices capable of operating in environments that challenge existing technologies.
Anirudha Sumant, Argonne materials scientist, says, “Just by stacking a 2D material on diamond, we get performance numbers that haven’t been seen before in diamond-based devices. It’s a new way forward for electronics.”
