HomeElectronics NewsAutomotive MOSFET Targets 48V Vehicles

Automotive MOSFET Targets 48V Vehicles

The power device can lower heat, sustain high current, and support evolving energy demands across modern automotive systems.

Industry-Leading 100V PowerDI 8080-5 Packaged MOSFET from Diodes Incorporated Provides Low RDS(ON) to Deliver High-Efficiency Designs in 48V Automotive Systems
Industry-Leading 100V PowerDI 8080-5 Packaged MOSFET from Diodes Incorporated Provides Low RDS(ON) to Deliver High-Efficiency Designs in 48V Automotive Systems

Diodes Incorporated has expanded its automotive power portfolio with a new 100 V N channel MOSFET in its PowerDI8080-5 package, designed for high-efficiency 48 V vehicle systems. The launch also includes 40 V to 80 V variants, aimed at reducing power losses and improving thermal performance in applications such as BLDC motors and DC DC converters across electric, hybrid, and conventional vehicles.

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As automotive systems increasingly shift toward 48 V architectures to support electrification and advanced features, power components must deliver higher efficiency within limited space and tighter thermal conditions. This MOSFET family addresses these challenges by combining ultra low R DS(ON) with a compact package, enabling better energy efficiency and reliable operation in demanding environments.

The flagship 100 V device offers a maximum R DS(ON) of 1.5 mΩ, helping reduce power losses in high-current applications such as power steering, braking systems, battery disconnect units, and onboard chargers. The portfolio also includes an 80 V variant and a 60 V option for 24 V systems, giving designers flexibility across different automotive voltage levels.

For lower-voltage use cases, the 40 V variant delivers one of the lowest R DS(ON) values in its class at 0.4 mΩ. A logic-level version operates at 0.64 mΩ with a 4.5 V gate drive, making it suitable for microcontroller-based applications such as actuators, fan controls, and load switches.

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From a design perspective, the package MOSFET occupies just 64 mm², around 40 percent smaller than traditional TO-263 packages, enabling more compact layouts. Copper clip bonding reduces thermal resistance to as low as 0.3°C/W, supporting high current handling, while the gullwing lead design improves manufacturability and reliability during thermal cycling.

Together, these features position the MOSFET family as a compact, high-efficiency solution for next-generation automotive power systems.

Click here for the official announcement.

Saba Aafreen
Saba Aafreen
Saba Aafreen is a Tech Journalist at EFY who blends on-ground industrial experience with a growing focus on AI-driven technologies in the evolving electronic industries.

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