- Qorvo’s GaN power amplifier provides 50 per cent power increase using efficient and reliable gallium nitride on silicon carbide (GaN-on-SiC) process technology
- This along with other features makes the device suitable for designing high power radar solutions
Qorvo has introduced a GaN power amplifier (PA) that delivers a 50 per cent increase in power for improved range, performance and multi-target tracking in S-band (2-4 GHz) phased array radars.
With 150 watts of power for the 2.9-3.5 GHz frequency range, the QPA3070 achieves 58 per cent power added efficiency (PAE) and 28 dB power gain, possible with the help of ultra-reliable and highly efficient gallium nitride (GaN) on silicon carbide (GaN-on-SiC) process technology, which offers superior efficiency, power density and affordability.
Key features
- Frequency range: 2.9-3.5 GHz
- PSAT: 50 dBm
- PAE: 58%
- Power gain: 28 dBm
The device enables engineers to design higher power radar solutions with significant size, weight, power and cost (SWAP-C) improvements and bring them to market faster.
“Qorvo’s GaN products are recognized throughout the industry for power and performance. With more than 30 years of experience delivering aerospace and defence solutions, we have a unique insight into the critical role that power plays in phased array systems. That knowledge is at the heart of this industry-first 150W power amplifier optimized for defence and commercial radar,” said Roger Hall, general manager of Qorvo’s High Performance Solutions (HPS) business.
The QPA3070 is available now in a small and cost-effective surface mount package of 7x7x0.85mm.
