New industrial-grade 650V GaN devices introduce multiple on-resistance options and package formats, helping engineers optimize efficiency, thermal performance, and power density in next-generation power conversion applications.
The portfolio of 650V gallium nitride (GaN) power transistors has been expanded with new on-resistance variants and industry-standard package options by Nexperia , giving power designers greater flexibility when developing high-efficiency industrial power systems. The additions target demanding applications such as AI datacenter power supplies, telecom infrastructure, renewable energy installations, battery energy storage systems, and industrial automation equipment.
The expanded lineup includes devices with 35mΩ, 50mΩ, and 70mΩ RDS(on) ratings, available in TO-247-3, TO-247-4, TOLL, and TOLT package formats. The broader selection allows engineers to fine-tune trade-offs between efficiency, thermal management, footprint, and overall system cost based on specific application requirements.
The key features are:
- 650V industrial-grade GaN FET portfolio
- 35mΩ, 50mΩ, and 70mΩ RDS(on) options
- Available in TO-247-3, TO-247-4, TOLL, and TOLT packages
- Supports higher switching frequencies with lower losses
- Designed for AI power supplies, renewable energy, BESS, and industrial drives
Demand for more efficient power conversion continues to rise as AI-driven computing platforms increase rack-level power requirements from below 3kW to as much as 12kW. At the same time, renewable energy and industrial electrification systems are pushing for higher switching frequencies and improved efficiency levels. These trends are accelerating the adoption of wide-bandgap semiconductor technologies such as GaN, which offer lower switching losses and support more compact system architectures than conventional silicon solutions.
At the system level, the devices enable higher switching frequencies while reducing both switching and conduction losses. This can translate into improved power density, lower cooling requirements, smaller passive components, and reduced magnetics size. The result is greater design flexibility and more compact power conversion systems.
In high-power LLC stages used in 10kW–12kW AI server power supplies, GaN-based designs can deliver approximately 0.8% to 1.2% higher efficiency at full load compared with silicon alternatives while increasing power density by around 40% to 70%. In 1kW high-voltage motor drives, inverter power losses can be reduced by roughly 20% to 25%, improving overall efficiency by up to 1.5% and enabling smaller thermal management solutions.
The devices are built on a proprietary GaN platform designed to combine fast switching performance, low switching losses, controlled dynamic behavior, and robust thermal characteristics. The 35mΩ and 70mΩ variants are available immediately, while 50mΩ versions are scheduled to arrive during the third quarter of 2026.
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