The power devices offer high reliability, better cooling, and longer life for tough uses like EVs, solar, data centers, and more demanding environments.
Navitas Semiconductor has introduced a new level of reliability to meet the system lifetime needs of automotive and industrial applications. The latest generation of Navitas’ 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs, combined with the optimized HV-T2PaK top-side cooled package, offers the industry’s highest creepage of 6.45 mm, ensuring IEC compliance for applications up to 1200V.
HV-T2PaK SiC MOSFETs enhance system power density and efficiency while improving thermal management, simplifying board design, and increasing manufacturability. Key applications include EV on-board chargers (OBC), DC-DC converters, data center power supplies, residential solar inverters, energy storage systems (ESS), EV DC fast chargers, and HVAC motor drives.
Navitas has established a new benchmark, ‘AEC-Plus’, which exceeds the AEC-Q101 and JEDEC standards. This industry-first qualification highlights Navitas’ commitment to delivering rigorously designed and validated products that meet the demanding lifetime requirements of automotive and industrial systems.
Some of the key features of the HV-T2PaK SiC MOSFETs include:
- Dynamic reverse bias (D-HTRB) and dynamic gate switching (D-HTGB) to test real-world applications
- More than twice as long power and temperature cycling tests
- Over three times longer tests for high temperature and high voltage
- 200°C TJMAX test to ensure safe operation under overload conditions
Navitas’ HV-T2PaK top-side cooled package, designed in a compact industry-standard form factor (14 mm x 18.5 mm), features an innovative groove design in the package mold compound that extends the creepage to 6.45 mm without reducing the size of the exposed thermal pad, ensuring optimal heat dissipation. Additionally, the exposed thermal pad is plated with nickel-nickel phosphorus (NiNiP) instead of the tin (Sn) plating used in existing TSC package solutions. This choice is crucial for maintaining the surface planarity of the exposed pad after reflow and ensuring reliable, thermally efficient attachment to the thermal interface material (TIM).
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