A new generation of 1200 V silicon carbide power modules raises the bar on current density and thermal performance, targeting high-power EV charging, industrial drives, and energy conversion systems.
A new generation of 1200 V silicon carbide power modules is entering the market, targeting the rising performance demands of high-power industrial systems and electric vehicle infrastructure. The latest launches focus on pushing current density and thermal performance limits, two parameters that increasingly define efficiency, size, and cooling cost in modern power electronics.
The newly introduced Gen3 SiC MOSFET modules span half-bridge, six-pack, and full-bridge configurations, addressing applications such as fast EV chargers, energy storage systems, industrial motor drives, and high-voltage DC-DC converters. At the top end, the S3 half-bridge format delivers current ratings as high as 608 A, paired with an on-resistance of just 2.4 mΩ. In the same package, junction-to-case thermal resistance drops to 0.07 °C/W, enabling higher power density while easing thermal management requirements.
The key features are:
- Up to 608 A current capability with on-resistance as low as 2.4 mΩ
- Ultra-low junction-to-case thermal resistance down to 0.07 °C/W
- Reduced switching and conduction losses, up to 30% lower than previous generations
- Wafer-level gate-oxide screening and >1350 V breakdown testing for reliability
Six-pack modules consolidate three-phase power stages into compact housings aimed at motor drives and advanced AC-DC conversion. These devices cover an RDS(on) range from 19.5 to 82 mΩ, with layouts designed to reduce parasitic inductance and improve switching behavior at high frequencies. By integrating more functionality into a single module, they help simplify system design and shrink overall inverter footprints.
For single-phase inverters and high-voltage DC systems, the full-bridge modules offer current capabilities up to 120 A and on-resistance as low as 8.6 mΩ. Combined with a thermal resistance of 0.28 °C/W, the devices are positioned for applications where efficiency and compactness directly impact operating costs and reliability. Across the lineup, the Gen3 SiC technology emphasizes both electrical and reliability improvements. Devices are tested beyond 1350 V breakdown and screened with wafer-level gate-oxide burn-in to ensure long-term robustness. Compared with earlier generations, the new chips operate at lower gate voltages and cut specific on-resistance and turn-off energy losses by as much as 30 percent.
With EV infrastructure scaling rapidly and industrial power systems pushing toward higher efficiency standards, these modules signal a broader shift toward higher current density SiC solutions that reduce losses, cooling complexity, and system size—all critical factors in next-generation power conversion designs.
