RFMW , Ltd. announces design and sales support for Qorvo’s TQP7M9106, high linearity amplifier. With frequency coverage from 50MHz to 1.5GHz, output IP3 is an astounding 50dBm making this 2 Watt amplifier ideal in applications such as small cell transceivers as well as 3G/4G wireless infrastructure, boosters and defense communications. The TQP7M9106 is part of a family of highly linear amplifiers that includes the TQM7M9104 which pushes the high end frequency to 4GHz. This 4x4mm QFN packaged amplifier provides ~21dB of gain at 1GHz while drawing only 455mA of current from a 5V supply. Evaluation boards are available for qualified applications.
The TQP7M9106 is a 2W 5V high-linearity driver amplifier in a standard 4x4mm QFN package. At 0.9 GHz, the TQP7M9106 offers 20.8 dB gain, ultra-high 50 dBm OIP3, and +33 dBm of compressed 1dB power while drawing 455 mA current. Internal circuitry allows the amplifier to offer ‘Class A’ linearity performance with ‘Class AB’ efficiency. The TQP7M9106 contains added patented features implemented on-chip that differentiates it from other products in the market. The amplifier contains RF overdrive protection allowing the device to be very rugged. The internal active bias allows the amplifier to operate off of a 5V supply but also provides DC overvoltage protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 1C HBM ESD rating. The device is housed in a lead-free / green / RoHS-compliant, industry-standard 4x4mm QFN surface-mount package. The device is ideal for 3G / 4G small cell base stations, high power amplifiers, repeaters, Defense communications, or any other general wireless application in the 50-1500 MHz frequency range.