Sunday, July 21, 2024

Plug-And-Play Gate Driver For High-Voltage SiC Power Modules

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The 3.3 kV XIFM plug-and-play digital gate driver is a highly integrated solution designed for seamless and rapid integration with high-voltage SiC-based power modules, simplifying system integration and accelerating development.

Microchip Technology has unveiled its latest innovation in response to the growing demand for Silicon Carbide (SiC) technology in various high-voltage applications, including transportation, electric grids, and heavy-duty vehicles. The company introduced the 3.3 kV XIFM plug-and-play mSiC gate driver, featuring patented Augmented Switching technology. This cutting-edge solution is designed to streamline the development process, offering preconfigured module settings for immediate use, thus significantly reducing design and evaluation time.

The XIFM digital gate driver is a compact, plug-and-play solution that eliminates the complex and time-consuming tasks of designing, testing, and qualifying a gate driver circuit. This gate driver enhances noise immunity with digital control, an integrated power supply, and a robust fibre-optic interface. It has preconfigured “turn-on/off” gate drive profiles tailored to optimise module performance.

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Key features of the gate driver include:

  • 10.2 kV primary-to-secondary reinforced isolation
  • Built-in monitoring and protection functions:
  • Temperature monitoring
  • DC link monitoring
  • Undervoltage Lockout (UVLO)
  • Overvoltage Lockout (OVLO)
  • Short-circuit/overcurrent protection (DESAT)
  • Negative Temperature Coefficient (NTC)
  • Meets the EN 50155 railway application standard

With over two decades of experience in SiC devices and power solutions, the company is committed to facilitating the adoption of SiC technology with its comprehensive mSiC™ product range, including SiC MOSFETS, diodes, and gate drivers.The plug-and-play mSiC gate driver is now available for purchase. 

Clayton Pillion, vice president of Microchip’s silicon carbide business unit, highlighted the ease of adoption provided by this solution, stating, “As the silicon carbide market continues to grow and push the boundaries of higher voltage, Microchip makes it easier for power system developers to adopt wide-bandgap technology with turnkey solutions like our 3.3 kV plug-and-play mSiC gate driver. By having the gate drive circuitry preconfigured, this solution can reduce design cycle time by up to 50% compared to a traditional analog solution.”

Akanksha Gaur
Akanksha Gaur
Akanksha Sondhi Gaur is a journalist at EFY. She has a German patent and brings a robust blend of 7 years of industrial & academic prowess to the table. Passionate about electronics, she has penned numerous research papers showcasing her expertise and keen insight.


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