A power device package combines isolation, cooling, and reduced EMI in a design that helps engineers build high-voltage systems with fewer components.
Navitas Semiconductor has launched the UHV-TO-247-4-ISO, a new high-voltage package for silicon carbide (SiC) MOSFETs designed to simplify the development of high-power systems while improving thermal performance, isolation, and electromagnetic interference (EMI) characteristics.
The package is intended for 1200 V to 3300 V GeneSiC SiC MOSFETs used in applications such as energy infrastructure, grid equipment, industrial power systems, and AI data centers. By integrating more than 6000 V of electrical isolation and over 12 mm of pin-to-pin creepage distance into the package itself, the design removes the need for separate high-voltage isolation materials, reducing system complexity and component count.
A key advantage of the new package is its thermal design. The UHV-TO-247-4-ISO incorporates an Aluminum Nitride (AlN) substrate and a reflow-compatible thermal pad that can be mounted directly to liquid- or air-cooled heat sinks. This eliminates the need for external thermal interface materials and can reduce thermal resistance between the device junction and heat sink by up to 60%. According to the company, the approach can increase power dissipation capability by up to 150%, helping designers achieve higher power density and improved system reliability.
The integrated isolation structure also lowers stray capacitance between the semiconductor die and heat sink. This reduces common-mode noise and radiated EMI, enabling higher switching speeds while improving efficiency and reducing the need for additional EMI suppression measures at the system level.
To improve long-term reliability, the package uses active metal brazing (AMB) technology on an AlN substrate. The construction is designed to withstand repeated power and thermal cycling stresses while eliminating external isolation and thermal interface layers that can become failure points over time.
“High-power system design is fundamentally challenged by the need to balance efficient thermal management with robust high-voltage isolation,” said Paul Wheeler, VP & GM of the SiC Business Unit at Navitas. “The UHV-TO-247-4-ISO package overcomes critical thermal and isolation challenges, delivering power module–class performance in a compact discrete form factor. As a highly efficient building block, it empowers system designers to unlock the full potential of GeneSiC TAP SiC MOSFET technology in next-generation applications such as immersion-cooled and liquid-cooled power electronics.”
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