A newly introduced surface-mount package for silicon carbide power devices combines high heat dissipation, 1200V-class voltage support, and automated assembly compatibility, targeting EV power electronics and industrial energy systems.
As electric vehicles and high-efficiency industrial systems demand greater power density, a new surface-mount packaging technology aims to bridge the gap between thermal performance and manufacturing efficiency. The latest package, the TSC3PAK design by Rohm Semiconductor, enables silicon carbide (SiC) MOSFETs to achieve heat dissipation levels comparable to traditional through-hole solutions while supporting automated surface-mount assembly processes.
The package features a top-side cooling architecture that shifts the primary heat dissipation surface to the top of the device. This approach allows designers to maintain strong thermal performance without relying on larger through-hole packages, which typically require manual assembly and can limit efforts to reduce system size and profile.
Designed for high-voltage power conversion applications, the package supports operation in systems such as onboard chargers and electric compressors used in electric and hybrid vehicles. It is also suited for industrial equipment including photovoltaic inverters and high-performance server power supplies, where efficiency and thermal management are critical design priorities.
The key features are:
- Top-side cooling structure for improved heat dissipation
- Thermal performance comparable to conventional through-hole packages
- Supports AC peak voltages up to 1200V
- 6.66mm creepage distance for enhanced insulation reliability
- Fourth-generation SiC MOSFETs with low on-resistance and fast switching performance
A key aspect of the design is a proprietary groove structure that enables a creepage distance of 6.66mm. This allows the package to accommodate AC peak voltages up to 1200V in Pollution Degree 2 environments while maintaining compatibility with commonly used industry footprints. The enhanced insulation capability can simplify high-voltage system design, improve reliability, and potentially lower implementation costs.
Devices built on the package utilise fourth-generation SiC MOSFET technology, delivering low on-resistance and fast switching performance. These characteristics help reduce switching losses during power conversion, enabling higher system efficiency and lower energy consumption.
The introduction reflects the broader industry shift toward surface-mount SiC solutions as manufacturers seek to combine the thermal advantages of traditional power packages with the productivity and scalability benefits of automated assembly. With demand for compact, efficient, and reliable power electronics continuing to grow across automotive and industrial sectors, advanced packaging technologies are becoming an increasingly important factor in overall system performance.
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