Combines GaN High-Electron-Mobility Transistors (HEMTs) and high-voltage gate drivers in system-in-package (SiP)
Containing two asymmetric gallium-nitride (GaN) transistors, the MasterGaN2 delivers an integrated GaN solution suited to soft-switching and active-rectification converter topologies.
The 650V normally-off GaN transistors have on-resistance (RDS(on)) of...
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