Tag: gallium-nitride (GaN) solution

Combines GaN High-Electron-Mobility Transistors (HEMTs) and high-voltage gate drivers in system-in-package (SiP) Containing two asymmetric gallium-nitride (GaN) transistors, the MasterGaN2 delivers an integrated GaN solution suited to soft-switching and active-rectification converter topologies. The 650V normally-off GaN transistors have on-resistance (RDS(on)) of...