Friday, May 24, 2024

New GaN Device Optimised For Asymmetrical Topologies

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Combines GaN High-Electron-Mobility Transistors (HEMTs) and high-voltage gate drivers in system-in-package (SiP)

Containing two asymmetric gallium-nitride (GaN) transistors, the MasterGaN2 delivers an integrated GaN solution suited to soft-switching and active-rectification converter topologies.

The 650V normally-off GaN transistors have on-resistance (RDS(on)) of 150mΩ and 225mΩ. Each is combined with an optimised gate driver, easing the usability of GaN technology similar to silicon devices. MasterGaN2 further extends the efficiency gains, size reduction and weight savings of topologies such as active clamp flyback.

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The MasterGaN power system-in-package (SiP) family combines the two GaN High-Electron-Mobility Transistors (HEMTs) and associated high-voltage gate drivers in the same package with built-in protection mechanisms. Designers can easily connect external devices including Hall sensors and a controller such as a DSP, FPGA, or microcontroller directly to the MasterGaN device.

The inputs are compatible with logic signals from 3.3V to 15V, which simplifies circuit design and bill of materials, permits a smaller footprint and streamlines assembly. This integration helps raise the power density of adaptors and fast chargers.

GaN technology is driving the evolution toward fast USB-PD adapters and smartphone chargers. This is evident from the fact that MasterGaN devices enable these to become up to 80 per cent smaller and 70 per cent lighter while charging 3x faster compared to silicon-based solutions.

The built-in protection comprises low-side and high-side under-voltage lockout (UVLO), gate-driver interlocks, a dedicated shutdown pin and over-temperature protection.

MasterGaN2 is in production now and available from STMicroelectronics in a 9mm x 9mm x 1mm GQFN package for high-voltage applications (having over 2mm creepage distance between high-voltage and low-voltage pads).


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