A new generation of 1200 V silicon carbide MOSFETs in a top-side-cooled Q-DPAK package boosts power density, lowers losses, and simplifies thermal management for EV chargers, solar inverters, and industrial systems.
Infineon Technologies has introduced its new 1200 V CoolSiC G2 MOSFETs in a top-side-cooled Q-DPAK package, targeting engineers designing compact, high-performance power systems. These devices deliver higher efficiency, improved thermal management, and reduced switching losses—critical advantages for applications like EV chargers, solar inverters, UPS systems, and industrial drives.
The second-generation CoolSiC MOSFETs significantly cut energy losses. Devices with equivalent RDS(on) values achieve up to 25% lower switching losses compared to the first generation, boosting system-level efficiency by as much as 0.1%. While seemingly small, this gain is substantial in high-power designs where energy savings compound over time.
The key features are:
- XT die attach technology cuts thermal resistance by more than 15%.
- Lower operating temperatures – devices run up to 11% cooler under load.
- High-temperature resilience – rated for overload operation at junction temps up to 200 °C.
- Robust design – engineered to resist parasitic turn-on in demanding conditions.
The Q-DPAK package’s top-side cooling approach further enhances thermal transfer by dissipating heat directly to the heatsink, rather than through the PCB. This simplifies thermal management, supports higher power densities, and enables more compact system designs. The package comes in both single-switch and dual half-bridge versions, with a uniform 2.3 mm height across variants to streamline heatsink integration.
Beyond thermal benefits, the Q-DPAK design reduces parasitic inductance, minimizing voltage overshoot and interference during high-speed switching. Its compact surface-mount form factor also fits well with automated production, reducing board space and manufacturing costs.
The family supports hard and soft-switching topologies including PFC stages, LLC converters, and full-bridge inverters. With RDS(on) options from 4 mΩ to 78 mΩ, designers can balance performance, thermal efficiency, and cost depending on application needs. Additional features such as Kelvin-source pins for accurate gate drive, unipolar design for stable performance across temperature ranges, and integrated body diodes for hard-switching resilience further simplify system design. Optimized for use with Infineon’s EiceDRIVER isolated gate drivers, the new CoolSiC Q-DPAK MOSFETs offer a versatile solution for compact, energy-efficient platforms in renewable energy, e-mobility, and industrial automation.
