Friday, July 19, 2024

1200 V SiC Schottky Diodes For Switching Power Designs

- Advertisement -

With high surge current robustness, low forward voltage drop, and reduced capacitive charge, these diodes are ideal for demanding applications such as solar power inverters, energy storage systems, and industrial drives. 

Vishay Intertechnology, Inc. has released 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes. These diodes feature a merged PIN Schottky (MPS) design, providing high surge current robustness, low forward voltage drop, capacitive charge, and reverse leakage current to enhance efficiency and reliability in switching power designs.They are available in various packages: TO-220AC 2L, TO-247AD 2L, TO-247AD 3L through-hole, and D²PAK 2L (TO-263AB 2L) surface-mount. They  have reduced forward voltage drop due to their MPS structure with backside thinned via laser annealing technology. They minimizes conduction losses, ensuring high system efficiency during light loads and idling. Unlike ultrafast diodes, these Gen 3 devices exhibit virtually no recovery tail, further boosting efficiency.

The key features include:

- Advertisement -
  • SiC diodes range from 5 A to 40 A
  • They offer low capacitance charge down to 28 nC
  • Reduced forward voltage drop of 1.35 V
  • Low typical reverse leakage current down to 2.5 µA at 25 °C

These diodes are ideal for AC/DC power factor correction (PFC) and DC/DC ultra high frequency output rectification in full-bridge power supplies (FBPS) and LLC converters. They are suited for applications in solar power inverters, energy storage systems, industrial drives and tools, and datacenters. Designed for harsh environments, the diodes can operate at temperatures up to +175 °C and have forward surge ratings up to 260 A, providing high robustness. Diodes in the D²PAK 2L package feature a molding compound with a high comparative tracking index (CTI) ≥ 600, ensuring excellent electrical insulation at elevated voltages.

The new SiC diodes are RoHS-compliant and halogen-free, having passed high-temperature reverse bias (HTRB) testing for 2000 hours and temperature cycling testing for 2000 thermal cycles, underscoring their reliability. Samples and production quantities of these new SiC diodes are now available, with lead times of 13 weeks.

For more information, click here.

Akanksha Gaur
Akanksha Gaur
Akanksha Sondhi Gaur is a journalist at EFY. She has a German patent and brings a robust blend of 7 years of industrial & academic prowess to the table. Passionate about electronics, she has penned numerous research papers showcasing her expertise and keen insight.


Unique DIY Projects

Electronics News

Truly Innovative Tech

MOst Popular Videos

Electronics Components