See how new GaN power devices reduce power loss, save space, improve power conversion, and support AI servers, robots, EV chargers, and industrial systems.
Gallium nitride (GaN) is becoming a preferred power technology for applications that need higher efficiency, faster switching, and smaller power systems. To meet this demand, onsemi has introduced its GaNEXUS gallium nitride (GaN) power portfolio. The first products include GaNEXUS FETs with voltage ratings from 40V to 650V and GaNEXUS Smart 650V GaN FETs. The devices target AI data center power delivery, 48V power systems, robotics, industrial automation, electric vehicle charging, and energy infrastructure.
The GaNEXUS devices are built to improve power conversion by offering faster switching speeds, lower switching losses, higher power density, and better thermal performance than conventional silicon-based power devices. These improvements help reduce the size of magnetic components and cooling systems while increasing overall system efficiency and lowering total system cost.
The portfolio supports a wide range of applications, including AI servers, high-performance computing, industrial power supplies, robotics, 48V power architectures, electric vehicle charging equipment, and energy infrastructure where compact and efficient power conversion is required.
For low- and medium-voltage applications such as 48V intermediate bus converters (IBCs), battery backup units (BBUs), and motor drives used in AI servers, the devices can reduce the size of magnetic components by about 30% to 60%. They can also increase power density by around 1.5 to 2 times, improve efficiency by 0.5% to 2% depending on the circuit design, reduce switching losses, and improve thermal performance and control stability.
For higher-voltage applications such as AI power shelves, high-voltage DC-DC converters, power factor correction (PFC) circuits, and LLC resonant power stages, the devices can reduce magnetic component size by up to 60%. They also deliver around 1.5 to 2 times higher power density and improve efficiency by approximately 0.5% to 1%, helping reduce heat generation in compact, high-power systems.
The GaNEXUS Smart devices integrate additional functions that simplify power-stage design, reduce design risk, and shorten system qualification time.
“Our GaNEXUS portfolio is enabling new architectures for power system design,” said Antoine Jalabert, vice president of the GaN division at onsemi. “As customers push for more power in less space, it gives engineers greater flexibility to overcome constraints that have limited conventional power architectures.”
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