New RF Amplifier for 4G/5G Infrastructure and Communication Systems

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  • Renesas Electronics’ latest addition to its RF amplifier series equips communication systems to operate within larger sub-6 GHz frequency bands
  • It features low quiescent current and offers high performance

With higher data rates, the need for better radio signal-to-noise ratios increases, which calls for higher linearity RF components.

Renesas Electronics Corporation has announced the strengthening of its RF Amplifier series with the new F1490 that is capable of delivering a lower quiescent current (75 mA) for a wide range of applications, including cellular 4G/5G base stations, communications systems, microwave (RF/IF), CATV, and test and measurement equipment. 

Wideband operation

The F1490 is a second-generation high-gain, 2-stage RF amplifier that can cover sub-6 GHz 5G frequency bands from 1.8 GHz to 5.0 GHz. The device benefits designers with simplified product selection for their transmitter (Tx) lineup and eliminates gain block with a better margin. It comes with two selectable gain modes for system design flexibility, lower power consumption and superior performance.

Designed to operate within the 1.8 GHz and 5.0 GHz frequency range, the F1490 RF amplifier features high gain, high linearity, and wide bandwidth. The device is well suited for use with both FDD and TDD sub-6 GHz 5G applications. The F1490’s pin-to-pin compatibility with current devices lowers the cost of design updates.

Key Features of the F1490

  • Two selectable gain modes: 39.5 dB high gain or 35.5 dB low gain
  • High-performance OIP3 of 38 dBm and OP1dB of 24 dBm
  • RF frequency range of 1.8 GHz to 5.0 GHz
  • Ultra-low quiescent current of 75 mA
  • Supply voltage of 5V
  • Up to +115 degrees Celsius TCB operating temperature

“The F1490 delivers high gain with selectable modes and ultra-low power consumption while maintaining high OP1dB performance and 2.4 dB noise figure, to meet all the system-level requirements customers want from their massive MIMO 5G pre-driver,” said Naveen Yanduru, Vice President of RF Communications, Industrial and Communications Business Division at Renesas. “We are excited to continue driving LTE and 5G innovation with our RF amplifier solutions for AAS, 4G/5G base stations, and other wireless communications equipment.”

Samples of the F1490 are available now in a 3mm x 3mm, 16-pin QFN package with mass production available in September 2020. 


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