Designed for demanding power conversion environments, the new devices enable faster switching, smaller systems, and improved thermal performance.
As power demands increase in AI data centers, electric vehicles and industrial systems, As power demands increase in AI data centers, electric vehicles and industrial systems, conventional silicon based power devices face limits in efficiency, size and thermal performance. Gallium nitride based power devices are being explored to support higher switching frequencies and power density while reducing system footprint.
Addressing this requirement, onsemi has entered a collaboration with GlobalFoundries to develop and manufacture gallium nitride power devices using a 200 millimeter enhancement mode GaN on silicon process. The initial focus is on 650 volt lateral GaN devices intended for power conversion applications across data centers, automotive, industrial and aerospace systems.
The collaboration combines GlobalFoundries process technology with onsemi power device design, silicon drivers and thermally enhanced packaging. Sampling of the first devices is planned for the first half of 2026, with volume production expected to follow.
Key points
- Development of 650 volt lateral GaN on silicon power devices
- Use of 200 millimetre enhancement mode GaN process technology
- Target applications include AI data center power supplies, electric vehicle onboard chargers, renewable energy systems and motor drives
- Higher switching frequency enables reduced system size and component count
- Integration with drivers and controllers supports compact power architectures
Dinesh Ramanathan, Senior Vice President of Corporate Strategy at onsemi, says, “This collaboration brings together advanced GaN process technology and power system expertise to support more efficient and compact power solutions for growing compute and electrification demands,”
