When logic and memory operate at the same ultralow voltage, data transfer becomes seamless, hinting at new efficiencies in AI models, edge devices, and wearable electronics.
A team of researchers from Peking University has developed a nano-gate ferroelectric transistor that operates at an ultralow voltage of 0.6 volts. The design shrinks the physical size of the gate to just 1 nanometer and offers a path to reducing energy consumption in advanced semiconductor systems.
Traditional logic chips operate at voltages around 0.7 volts for energy efficiency, while mainstream non-volatile memories such as NAND flash require higher voltages for write operations. This discrepancy previously necessitated complex voltage step-up or step-down circuits, which increased power consumption, wasted space, and created data transfer bottlenecks between logic and memory units.
The new nano-gate transistors are designed to be voltage-compatible with both memory and logic devices. By enabling data transfer at the same low voltage, the architecture eliminates barriers and reduces energy loss, addressing a major limitation in AI chips where 60 to 90 percent of power is often spent on data movement rather than computation.
Reviewers note that the devices demonstrate strong memory performance and that the underlying physical principle is universal, making it applicable to mainstream ferroelectric materials. The technology can also be produced using standard industrial processes, highlighting its compatibility with large-scale manufacturing.
Applications for this development include high-speed inference in large AI models, edge intelligence, wearable electronics, and Internet of Things devices, where low power consumption is critical. The approach could help improve both computational efficiency and energy sustainability in future semiconductor products.
Qiu Chenguang, Senior Researcher, Peking University, said, “Our findings resolve the challenge of voltage incompatibility between memory and logic. Data can now be transferred at low voltage with minimal energy consumption for high-speed interaction.”
