The first LPDDR5X using 1γ tech brings faster AI, 10.7 Gbps speed, 20% power savings, and fits phones, thanks to a smaller design.
Micron Technology has started shipping the world’s first LPDDR5X memory built on the advanced 1-gamma (1γ) node. This next-generation memory delivers a speed of 10.7 Gbps—the fastest LPDDR5X to date—and achieves up to 20% power savings. Built to handle demanding AI features on flagship smartphones, it supports real-time translation, image generation, and other on-device AI workloads while improving battery life.
Engineered for space-constrained devices, the memory comes in the industry’s thinnest package at just 0.61 mm—6% thinner than alternatives and 14% thinner than Micron’s previous generation. This reduced height opens up new possibilities for slimmer and foldable smartphone designs.
The 1γ-based LPDDR5X is also its first mobile memory built using extreme ultraviolet (EUV) lithography and advanced CMOS with high-K metal gate technology, increasing performance and bit density.
By combining higher bandwidth and lower power, the memory enables faster AI interactions on mobile platforms. Micron tested the memory using the Llama 2 language model, comparing it against the earlier 1β-based 7.5 Gbps version. The results show:
- 30% faster responses when recommending local restaurants
- Over 50% faster in translating English voice input into Spanish text
- Up to 25% faster in generating car purchase suggestions based on preferences
This performance boost helps AI features feel more immediate and responsive, directly on the device—without relying on the cloud.
The company claims that the product helps mobile devices run smarter and longer. With up to 20% less power use, it extends battery life even while running intensive AI tasks. Its performance and efficiency also make it a strong fit for emerging AI use cases beyond phones—including AI PCs, smart vehicles, and data center servers.
