Saturday, July 20, 2024

1200V MOSFET Half-Bridge Power Module

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1200 V silicon carbide modules equipped with M3S technology claim to offer faster-switching speeds and deliver high power density in various applications.

1200V MOSFET Half-Bridge Power Module

Onsemi has launched the latest generation of 1200 V EliteSiC silicon carbide (SiC) M3S devices, which the company claims to empower power electronics designers to achieve exceptional efficiency and reduce system costs. According to the press release issued by the company, the new product lineup comprises rapid-switching metal-oxide-semiconductor field-effect transistors (MOSFETs) and half-bridge power integrated modules that feature the industry’s lowest drain-to-source resistance per switch position in standard packages. These devices claim to offer faster-switching speeds, catering to the increasing demand for 800 V electric vehicle (EV) onboard chargers (OBC) and energy infrastructure applications like EV charging, solar, and energy storage systems.

The press release highlights that power integrated modules (PIMs) are designed for industrial applications and well-suited for high-power conversion stages, including DC-AC, AC-DC, and DC-DC. The PIMs claim enhanced integration with optimized direct bonded copper designs that facilitate balanced current sharing and thermal distribution between parallel switches. According to the company’s claim, the devices are specifically designed to deliver high power density in energy infrastructure, EV DC fast charging, and uninterruptible power supplies (UPS). Additionally, the devices are optimized for high-power applications like onboard chargers (OBCs) up to 22 kW and high-voltage to low-voltage DC-DC converters. The press release says that M3S technology used in these MOSFETs is specifically designed for high-speed switching applications and boasts a best-in-class figure of merits for switching losses.

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“Onsemi’s latest generation of automotive and industrial EliteSiC M3S products will allow designers to reduce their application footprint and system cooling requirements,” said Asif Jakwani, senior vice president and general manager of the Advanced Power Division, Onsemi. “This helps designers to develop high power converters with higher levels of efficiency and increased power densities.”

Some of the features of the Silicon Carbide module include:

  • 4 mW / 1200 V M3S SiC MOSFET Half−Bridge
  • Thermistor
  • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM
  • Options with Solderable Pins and Press−Fit Pins
  • These Devices are Pb−Free, Halide Free and are RoHS Compliant

For more information, click here.

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a journalist at EFY. She is an Electronics and Communication Engineer with over five years of academic experience. Her expertise lies in working with development boards and IoT cloud. She enjoys writing as it enables her to share her knowledge and insights related to electronics, with like-minded techies.


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