The 650 V MOSFET improves efficiency and power, reducing energy loss in telecom, industrial, and computing devices like servers, motor drives, and battery chargers.
Vishay Intertechnology, Inc. has introduced the SiHK050N65E, a new 650 V Series Gen 4.5 power MOSFET designed for high efficiency and power density in telecom, industrial, and computing applications. This n-channel MOSFET reduces on-resistance by 48.2% and lowers resistance times gate charge by 65.4% compared to previous generations, improving performance in power conversion systems.
The SiHK050N65E and other devices in the Gen 4.5 series enhance efficiency and power density in power factor correction (PFC) and DC/DC converter blocks. Target applications include servers, edge computing, supercomputers, UPS systems, HID lamps, telecom SMPS, solar inverters, welding equipment, induction heating, motor drives, and battery chargers.
Built on Vishay’s E Series superjunction technology, the MOSFET has a low on-resistance of 0.048 Ω at 10 V, enabling higher power ratings for applications above 6 kW. With 50 V of additional breakdown voltage, it meets 200 VAC to 277 VAC input requirements and complies with Open Compute Project’s Open Rack V3 standards. The device features an ultra-low gate charge of 78 nC, achieving a 3.74 Ω*nC figure of merit, reducing energy losses and enabling 96% peak efficiency in server power supplies.
A few key key features of the SiHK050N65E include:
- 4th generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
Optimized for hard-switched topologies like PFC and two-switch forward designs, the MOSFET offers low output capacitance, with Co(er) at 167 pF and Co(tr) at 1119 pF. It achieves an industry-low resistance times Co(er) FOM of 8.0 Ω*pF. The MOSFET comes in a PowerPAK 10 x 12 package with a Kelvin connection to minimize gate noise and improve dv/dt ruggedness. RoHS-compliant and halogen-free is designed for overvoltage transient protection with 100% UIS-tested avalanche mode performance.
