New power MOSFETs with optimized thermal and electrical design deliver lower losses, higher efficiency, and improved reliability for industrial power systems.
Toshiba has unveiled two high-performance N-channel power MOSFETs—TPM1R908QM (80 V) and TPM7R10CQ5 (150 V)—built on its latest SOP Advance(E) packaging platform. Aimed at industrial switched-mode power supplies, data centers, and telecom infrastructure, the devices promise lower conduction losses, improved thermal handling, and higher switching efficiency in compact footprints.
It has SOP Advance(E) design, which addresses performance bottlenecks caused by electrical and thermal parasitics in traditional MOSFET packages. By minimizing lead inductance and optimizing internal thermal paths, the new package achieves 65% lower package resistance and 15% lower thermal resistance compared to its predecessor, SOP Advance(N). The result: reduced energy waste, cooler operation, and greater reliability under high load.
The key features are:
- Typical RDS(on) 1.5 mΩ (max. 1.9 mΩ) and 5.7 mΩ (max. 7.1 mΩ) at VGS = 10 V
- Drain current up to 238 A and 120 A at 25 °C case temperature
- Low gate-switching charge (35 nC) and (43 nC) and output charge (111 nC) for reduced switching losses
- Fast switching with rise time of 50 ns, fall time of 38 ns
- Thermal resistance channel-to-case: 0.6 °C/W
Both MOSFETs share the same compact 4.9 mm × 6.1 mm SOP Advance(E) footprint, enabling space-constrained designs without sacrificing current-handling capability. The improved thermal path allows operation up to 175 °C channel temperature, extending device longevity and maintaining efficiency under continuous high load.
Designers can accelerate development using Toshiba’s G0 and G2 SPICE models for accurate circuit simulation and performance prediction.By combining advanced semiconductor characteristics with a thermally and electrically optimized package.
