HomeElectronics NewsAdvancing Space Technology With Memory Devices

Advancing Space Technology With Memory Devices

The industry’s first radiation-hardened non-volatile memory devices are designed for extreme environments like space and offer reliability and endurance.

F-RAM

Infineon Technologies AG focuses on space-based applications, with its products used in satellites, Mars rover instruments, and space telescopes, all of which require high reliability under adverse conditions. The company has announced the availability of the industry’s first radiation-hardened (rad-hard) 1 and 2 Mb parallel interface ferroelectric-RAM (F-RAM) non-volatile memory devices. 

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The company claims that the memory portfolio offers reliability and endurance, with up to 120 years of data retention at 85 degrees Celsius, random access and full memory write at bus speeds. The F-RAM devices are intrinsically rad-hard, making them suited for the mission requirements of space-based applications that historically have used slower EEPROM non-volatile storage devices. Features compared to alternatives include faster memory random access, better data security with instant non-volatile write technology, low power, with programming voltage down to 2 V and a maximum operating current of 20 mA.

The radiation-hardened F-RAM devices are designed for various applications, including data storage for sensors and instruments, calibration data logging, secure key storage for encryption, and boot code storage. These devices are suitable for demanding environments such as outer space, avionics, and military applications, operating across a wide temperature range from -55°C to 125°C. The new parallel interface F-RAM models from Infineon offer superior non-volatile memory capabilities due to their unique chemical composition, which utilizes an instantaneous atomic state switch rather than the trapped charge method found in EEPROM technologies. This design ensures immunity to soft errors, magnetic fields, and radiation effects. Additionally, these devices do not require software to manage page boundaries and support nearly limitless endurance (10^13 write cycles), eliminating the need for wear leveling.

“As more space applications are architected to process data on-system, and not on-ground via telemetry, there is increasing demand for high-reliability, non-volatile memory to work in tandem with space-grade processors and FPGAs for data-logging applications” said Helmut Puchner, Vice President, Fellow Aerospace and Defense, Infineon Technologies.

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a Senior Technology Journalist at Electronics For You, specialising in embedded systems, development boards, and IoT cloud solutions. With a Master’s degree in Signal Processing, she combines strong technical knowledge with hands-on industry experience to deliver clear, insightful, and application-focused content. Nidhi began her career in engineering roles, working as a Product Engineer at Makerdemy, where she gained practical exposure to IoT systems, development platforms, and real-world implementation challenges. She has also worked as an IoT intern and robotics developer, building a solid foundation in hardware-software integration and emerging technologies. Before transitioning fully into technology journalism, she spent several years in academia as an Assistant Professor and Lecturer, teaching electronics and related subjects. This background reflects in her writing, which is structured, easy to understand, and highly educational for both students and professionals. At Electronics For You, Nidhi covers a wide range of topics including embedded development, cloud-connected devices, and next-generation electronics platforms. Her work focuses on simplifying complex technologies while maintaining technical accuracy, helping engineers, developers, and learners stay updated in a rapidly evolving ecosystem.

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