Stanford University researchers have unveiled a material—niobium phosphide—that could revolutionize chip design by dramatically reducing energy loss in ultra-thin interconnects.

The relentless pursuit of smaller, faster electronic devices has driven technological advancements, but with miniaturization comes a challenge: heat. As electronic components shrink, the amount of heat generated increases, particularly in the wiring that connects transistors. These interconnects, traditionally made from copper, face the issue of rising electrical resistance as they scale down, causing more energy to be lost as heat. This, in turn, requires more power to maintain the same performance.
Researchers at Stanford University have found a potential solution to this problem in niobium phosphide (NbP), a material that outperforms copper in conductivity at thicknesses below 5 nanometers, much thinner than today’s typical chip wiring of 10–30 nanometers. The key to NbP’s superior performance lies in its unique quantum properties. As a topological material, NbP’s surface conductivity remains high and stable, regardless of how the material is shaped or thinned. This “topologically protected surface state” makes NbP highly resistant to performance degradation, even when modified or reduced in size.
The team observed these extraordinary properties in disordered NbP films. Typically, creating materials with such quantum properties requires precise control over their structure—much like tempering chocolate to create a glossy, uniform product. However, NbP demonstrated exceptional conductivity despite lacking this fine-tuning, simplifying the manufacturing process and potentially lowering production costs.
The team claimed that this discovery could herald a new era in chip design, enabling more powerful, energy-efficient devices without the heat limitations of traditional materials. Although questions remain about the material’s scalability and availability, NbP’s promise is clear, and its potential to transform the tech industry is exciting.