New gate driver delivers 1.9 A source and 2.3 A sink output, offering robust performance and improved switching efficiency for demanding power systems.
Littelfuse, Inc. has introduced the IXD2012NTR, a high-speed gate driver designed for high-side and low-side operation in half-bridge configurations. Engineered to meet the needs of high-frequency power applications, it delivers robust performance, design flexibility, and efficient switching.
This gate driver provides the robust gate current required for fast, reliable switching in demanding applications. To improve efficiency and simplify design,it integrates cross-conduction protection logic, which prevents simultaneous conduction of the high- and low-side switches—an essential feature for reducing power loss and circuit complexity. Packaged in a compact SOIC(N)-8 form factor and rated for operation from −40 °C to +125 °C, the device ensures dependable performance even in harsh environments.
The key features are:
- Drives two N-channel MOSFETs or IGBTs
- Operates in a wide 10–20 V range
- Supports high-side switching up to 200 V (bootstrap configuration)
- TTL and CMOS logic compatible (down to 3.3 V)
- Drive strength: 1.9 A source, 2.3 A sink
According to June Zhang, Product Manager in the Littelfuse Semiconductor Business Unit, the IXD2012NTR serves as a reliable, drop-in replacement for existing industry-standard gate drivers, offering a trusted alternative to help manufacturers meet production demands without sacrificing performance.
The driver is ideally suited for a range of high-frequency applications including DC-DC converters, AC-DC inverters, motor controllers, and Class-D power amplifiers. It is also designed to meet the needs of markets such as industrial equipment, consumer appliances, building automation, energy storage, solar energy systems, and power tools. It is available in tape and reel format with a quantity of 3,000 units per reel. Samples can be requested through Littelfuse’s global network of authorized distributors.
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