Friday, July 19, 2024

Gate Driver For Industrial Applications

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The gate driver is designed for SiC MOSFETs, enhancing power applications in electric vehicles, smart homes, and industrial settings.

New driver offers tailored turn-on and turn-off timing, minimized switching losses, and enhanced dV/dt immunity
New driver offers tailored turn-on and turn-off timing, minimized switching losses, and enhanced dV/dt immunity

Littelfuse, Inc., an industrial technology manufacturing company, announces the launch of the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver. This driver is designed to operate Silicon Carbide (SiC) MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) in industrial applications.

The MOSFET features separate 9A source and sink outputs, allowing customized turn-on and turn-off timings and reducing switching losses. It includes an internal negative charge regulator that provides a selectable negative gate drive bias, improving dV/dt immunity and speeding up turn-off times. The driver operates with a voltage range (VDD—VSS) of up to 35V.

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A notable feature of the MOSFET is its internal negative charge pump regulator, eliminating the need for an external auxiliary power supply or DC/DC converter. This is useful for turning off SiC MOSFETs and saves space typically required for external logic-level translator circuitry. Its logic input is compatible with standard TTL or CMOS logic levels, further saving space.

The IX4352NE is optimally designed for driving SiC MOSFETs in a range of industrial applications, including on-board and off-board chargers, Power Factor Correction (PFC) systems, DC/DC converters, motor controllers, and industrial power inverters. It is suited for power electronics applications in sectors such as electric vehicles, industrial systems, alternative energy, smart homes, and building automation.

The device streamlines circuit design and enhances integration levels. It includes protection features like desaturation detection (DESAT) with a soft shutdown sink driver, Under Voltage Lockout (UVLO), and thermal shutdown (TSD), which safeguard both the power device and the gate driver. An integrated open-drain FAULT output provides fault condition signals to the microcontroller, improving safety and reliability. Additionally, it conserves PCB space and boosts circuit density, enhancing the system’s efficiency.

“The IX4352NE extends our broad range of low-side gate drivers with a new 9 A sink/source driver, simplifying the gate drive circuitry needed for SiC MOSFETs,” commented June Zhang, Product Manager, Integrated Circuits Division (SBU) at Littelfuse. 

For more information, click here.

Nidhi Agarwal
Nidhi Agarwal
Nidhi Agarwal is a journalist at EFY. She is an Electronics and Communication Engineer with over five years of academic experience. Her expertise lies in working with development boards and IoT cloud. She enjoys writing as it enables her to share her knowledge and insights related to electronics, with like-minded techies.

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