Tuesday, June 18, 2024

New  Enhanced Low-Power GaN For Optimal Energy Efficiency And Compact Design

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  • Engineers can create AC/DC solutions that are significantly smaller in size and attain system efficiency surpassing 95%, thereby simplifying thermal design. 
  • These latest GaN devices are compatible with the prevalent AC/DC power conversion topologies.

Texas Instruments (TI) has unveiled its latest development: an enhanced low-power gallium nitride (GaN) portfolio. This portfolio aims to enhance power density, optimize system efficiency, and reduce the dimensions of AC/DC consumer power electronics and industrial systems. TI’s comprehensive collection of GaN field-effect transistors (FETs), complete with integrated gate drivers, tackles prevalent thermal design issues by ensuring adapters remain cooler while delivering increased power within a more compact form factor.

The newly introduced GaN FET portfolio, featuring the LMG3622, LMG3624, and LMG3626, incorporates the industry’s most precise integrated current sensing capabilities. This feature empowers designers to achieve peak efficiency by eliminating the necessity for an external shunt resistor, consequently reducing associated power losses by up to an impressive 94% when compared to conventional current-sensing setups employed with discrete GaN and silicon FETs.

Optimize Energy Efficiency and Streamline Thermal Design

The company’s GaN FETs, featuring integrated gate drivers, facilitate faster switching speeds to prevent adapters from overheating. 

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  • Exceptional system efficiency attainable: Up to 94% for <75-W AC/DC applications and Surpassing 95% for >75-W AC/DC applications
  • New GaN devices enable significant size reduction: Typical 67-W power adapter footprint can be reduced by up to 50% when compared to silicon-based solutions.

The portfolio is meticulously optimised for prevalent AC/DC power conversion topologies, including quasi-resonant flyback, asymmetrical half bridge flyback, inductor-inductor-converter, totem-pole power factor correction, and active clamp flyback. Commitment to Long-Term GaN Manufacturing, the company boasts a rich history of globally distributed internal manufacturing operations, encompassing wafer fabs, assembly and test facilities, and bump and probe facilities spanning 15 worldwide sites. The company’s commitment to GaN technology manufacturing spans over a decade.

Ensuring Manufacturing Reliability and Accessibility

With goals to manufacture more than 90% of its products internally by 2030, the company assures its customers of reliable capacity for decades to come. Production quantities as well as pre-production quantities, are now available for purchase on TI.com/GaN. Pricing starts at US$3.18 for 1,000-unit quantities. These components are presented in an 8-mm-by-5.3-mm, 38-pin quad flat no-lead package. Evaluation modules are available starting at US$250. Various payment and shipping options are at your disposal. 

“Today’s discerning consumers are increasingly seeking power adapters that are smaller, lighter, and more portable while also delivering rapid, energy-efficient charging, With our expanded portfolio, designers now have the opportunity to extend the advantages of low-power GaN technology in a wide range of everyday consumer applications, including mobile phone and laptop chargers, TV power supplies, and USB wall outlets. Moreover, TI’s portfolio is well-positioned to meet the surging demand for high efficiency and compact designs in industrial systems such as power tools and server auxiliary power supplies” remarked Kannan Soundarapandian, the General Manager of High Voltage Power at TI. “

Akanksha Gaur
Akanksha Gaur
Akanksha Sondhi Gaur is a journalist at EFY. She has a German patent and brings a robust blend of 7 years of industrial & academic prowess to the table. Passionate about electronics, she has penned numerous research papers showcasing her expertise and keen insight.


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