AEC-Q101 qualified bare die and discrete packaged devices undergo WLBI screening and are tested for avalanche breakdown voltage exceeding 2200 V.
SemiQ Inc., has introduced a new family of 1700 V SiC MOSFETs designed to enhance medium-voltage, high-power conversion applications. These include photovoltaic and wind inverters, energy storage, electric vehicle (EV) and roadside charging, uninterruptible power supplies (UPS), and induction heating/welding systems.
The high-speed QSiC 1700 V MOSFETs feature a planar D-MOSFET design, optimizing system size, power density, and cost-effectiveness in large-scale applications. Their reliable body diode operates up to 175°C, with components rigorously tested to exceed 1900 V, and UL avalanche-tested to 600 mJ, ensuring durability and robust performance.
The key specifications are:
- Aluminum top side, nickel/silver bottom side
- Power dissipation: 564 W
- Continuous drain current: 83 A @ 25°C
- Pulsed drain current: 250 A
- Gate threshold voltage: 2.7 V @ 25°C
- RDSON: 31 mΩ @ 25°C
- Fast reverse recovery time: 17 ns
- Low gate-source leakage
Available in both bare die (GP2T030A170X) and TO-247-4L packaged forms (GP2T030A170H), the QSiC 1700 V devices also come in an AEC-Q101 automotive-qualified version (AS2T030A170X and AS2T030A170H). These devices offer low switching and conduction losses, reduced capacitance, and rugged gate oxide for enhanced long-term reliability. All components undergo wafer-level burn-in (WLBI) to eliminate weak oxide devices, guaranteeing optimal performance.
Additionally, SemiQ has announced three power modules designed to simplify system integration. These include a standard-footprint 62 mm half-bridge module with an insulated baseplate and two SOT-227 packaged power modules, which improve power density and simplify mounting processes.
The power modules provide higher power dissipation, with the SOT-227 versions offering a power dissipation of 652 W and the half-bridge module providing up to 2113 W of dissipation, ensuring enhanced thermal management for high-performance applications.
