Gate Driver That Can Power Almost Any Electronic System

By Jay Soni

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Texas Instruments’ DRV8300U Gate Driver is 100V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs.

Credit : Texas Instruments

A gate driver is a power amplifier that accepts a low power input from a controller IC and produces the appropriate high current gate drive for a power device. It is used when a PWM controller cannot provide the output current required to drive the gate capacitance of the associated power device.

The DRV8300UD three-phase gate driver generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents.

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The phase pins SHx can tolerate the significant negative voltage transients. At the same time, the high side gate driver supply BSTx and GHx can support higher positive voltage transients (125V) abs max voltage which improves the system’s robustness. Small propagation delay and delay matching specifications minimize the deadtime requirement, further improving efficiency. Under-voltage protection is provided for both the low and high-side of the Texas Instruments DRV8300U through GVDD and BST under-voltage lockout.

Features
  • 100V three-phase half-bridge gate driver
    – Drives N-channel MOSFETs (NMOS)
    – 5V to 20V gate driver supply (GVDD)
    – MOSFET supply (SHx) support up to 100V
  • Integrated bootstrap diodes (DRV8300UD devices)
  • Supports inverting and non-inverting INLx inputs
  • Bootstrap gate drive architecture
    – 750mA source current
    – 1.5A sink current
  • Supports up to 15S battery-powered applications
  • Higher BSTUV (8V typ.) and GVDDUV (7.6V typ.) threshold to support standard MOSFETs
  • Low leakage current on SHx pins (< 55µA)
  • Absolute maximum BSTx voltage up to 125V
  • Supports negative transients up to -22V on SHx
  • Built-in cross-conduction prevention
  • Adjustable deadtime through DT pin for QFN package variants
  • Fixed deadtime insertion of 200nS for TSSOP package variants
  • Supports 3.3V and 5V logic inputs with 20V Abs max
    4nS typical propagation delay matching
  • Compact QFN and TSSOP packages
  • Efficient system design with power blocks
  • Integrated protection features
    – BST undervoltage lockout (BSTUV)
    – GVDD undervoltage (GVDDUV)
Applications
  • E-bikes, E-scooters, and E-mobility
  • Fans, pumps, and servo drives
  • Brushless-DC (BLDC) motor modules and PMSM
  • Cordless garden and power tools, lawnmowers
  • Drones, robotics, and RC toys
  • Industrial and logistics robots

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